Global automotive technology company Eaton has announced that it will supply Infineon Technologies with advanced circuit protection technology for European 800 volt electric vehicles (EV).

Eaton's advanced circuit protection technology will be used in Infineon's new family of 800 volt silicon carbide (SiC) MOSFETs, which are designed for high-efficiency power conversion in electric vehicles.

Eaton's new silicon-oxide-nitride-oxide-silicon (SONOS) protection devices offer best-in-class protection against extreme voltage, temperature and electrical stresses. The devices are ideal for use in the new generation of high-voltage SiC MOSFETs, which are capable of operating at voltages up to 800 volts.

"We are delighted to be working with Infineon to supply our advanced circuit protection technology for their new generation of 800 volt SiC MOSFETs," said Scott Weffect, vice president and general manager of Eaton's automotive circuit protection business.

"Our SONOS devices offer the perfect solution for the challenges posed by high-voltage, high-temperature power semiconductors, and we are proud to be playing a role in the development of the next generation of electric vehicles."

Eaton's SONOS devices are manufactured using a unique process that combines silicon-on-insulator (SOI) technology with nitride-oxide-silicon (NOS) gatestack technology. This combination of technologies provides outstanding performance in terms of voltage, current and thermal stability.

The devices are also extremely resistant to latch-up, a phenomenon that can cause false triggering of MOSFETs. This is a critical factor in the operation of high-voltage SiC MOSFETs, which are susceptible to latch-up due to their high current densities.

Eaton's SONOS devices are available in a variety of package types and voltage ratings, making them ideal for use in a wide range of applications, including electric vehicles, solar inverters, UPS systems and industrial drives.