As the market for electric vehicles (EVs) continues to grow, so does the demand for the power electronics that enable them. And as the performance requirements for these power electronic devices continue to increase, silicon carbide (SiC) is becoming the material of choice to meet the demand. Here’s a look at why.
What is Silicon Carbide?
Silicon carbide is a compound of silicon and carbon with the chemical formula SiC. It is a very hard material with a Mohs hardness of 9.5, which is higher than that of diamond. It is also chemically inert, heat resistant, and able to withstand very high voltages. These properties make it ideal for use in power semiconductor devices.
Why is Silicon Carbide Ideal for EV Power Electronics?
The main reason silicon carbide is becoming the material of choice for EV power electronics is its higher power density. This means that SiC devices can handle more power in a smaller package than their silicon counterparts. This is important in EVs, where space is at a premium. In addition, SiC devices can operate at higher temperatures, which further reduces the size and weight of cooling systems.
Another key advantage of silicon carbide is that it can be used to create chips that can handle both high voltage and high current. This is important in EV power electronics because it enables the development of smaller, more efficient devices. This, in turn, reduces the overall cost of the power electronics system.
Finally, silicon carbide is more resistant to electromagnetic interference (EMI) than silicon. This is important in EVs because the power electronics system is responsible for converting the high-voltage direct current (DC) from the battery into the alternating current (AC) needed to power the electric motor. The system must also be able to handle the rapid changes in voltage and current that occur during braking and other EV maneuvers.
The Future of Silicon Carbide in EV Power Electronics
It is clear that silicon carbide is well-suited for use in EV power electronics. As the market for EVs continues to grow, the demand for power semiconductor devices will also continue to grow. And as the performance requirements for these devices continue to increase, silicon carbide will become an increasingly attractive option.